摘要
自组装半导体量子点是人工设计、生长的一种具有量子尺寸效应、量子干涉效应、表面效应、量子隧穿和Coulumb阻塞效应以及非线性光学效应的新型功能材料.由于其具有晶体缺陷少、材料制备工艺相对简单等优点而在未来纳米电子器件的研制中有重要的应用价值.本文按照纵向输运、横向输运、电荷存储的顺序,扼要评述了自组装半导体量子点电子学性质的最新研究进展,并对目前存在的问题和发展前景作了分析.
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. In the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第5期463-470,共8页
Acta Metallurgica Sinica
基金
国家重点基础研究发展规划项目G2000068303和2002CB311905国家高技术研究发展计划项目 2002AA311070和2002AA311170国家自然科学基金项目60306010和90101004资助
关键词
自组装半导体量子点
量子尺寸效应
纳米电子器件
self-assembled semiconductor quantum dot
quantum size effect
nanoelectronic device
