新型CNT-FED栅极结构表面二次电子发射研究

Secondary Electron Emission from Surface of Novel Gate Structure in CNT-FED

提出了一种简单可行的CNT FED栅极制备方法,即采用金属网板作为栅极,网板上下表面同样制备一定厚度的介质层,网板表面和内通道壁上蒸发MgO和MgF2薄膜,一次电子在电场作用下轰击薄膜层将激发大量二次电子和背散射电子,弥补了栅极对初始电子的截获,提高了器件发射电流密度和发光亮度.文中对该模型中二次电子发射过程进行了数值模拟计算并进行了相关验证实验.

In this paper, a new gate structure, a metal mesh with cone funnels is proposed. MgO film and MgF_2 film are deposited on the surfaces of the mesh and the funnels by evaporation. When the primary electrons bombard on the gate electrode with initial energy, the secondary electrons and backscatters are generated. The brightness of the novel triode structure CNT-FED increases. Simulation of secondary electron emission is done with Monte-Carlo. CNT-FED devices with the new type of gate structure are fabricated. The results of emission experiments are also shown in this paper.