摘要
A research group headed by Prof. Niu Zhichuan from the State Key Laboratoryfor Semiconductor Superlattice and Microstructures affiliated to the CAS Institute of Semiconductorshas succeeded in developing a GaAs-based long-wavelength laser device: InAs/ GaAs self-assemblyquantum dot laser with a wavelength of 1.33 (am under continuous-wave operation mode at roomtemperature. Experts say this is the most important achievement in the field of GaAs-basednear-infrared, long-wavelength materials and devices in China in recent years. It is known that inthe near future the optical fiber communication network will be dominated by opto-electronicintegrated devices in order to meet the increasing demands for higher-speed, more reliable andstable operation of data transferring and processing systems. The technology of optoelectronicintegrated devices now becomes a hot topic in the world.
