摘要
本文介绍了一台溅射式宽束离子源,直径为60m的离子束中总束流约为40mA,在源内利用等离子体溅射方法产生固体材料的粒子流含量可达50～80%。这台离子源解决了溅射的准直性及能量可控性问题,因此将有重要的实用价值。
This paper introduces a sputtering type broad-beam ion source. The total ion current in an ion beam with 6cm diameter is about 40mA. The solid material ion content of 50～80% is produced by plasma sputtering inside the source. This type of ion source is of great importance in practical applioations because of the collimation of sputtering and the controllability of the acceleration voltage.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1989年第6期101-105,共5页
Journal of Xi'an Jiaotong University
关键词
溅射式
离子源
等离子体
电子温度
sputtering
plasmas
ion source
electron temperature
