摘要
用过硫酸铵氧化原位聚合法成功制备了聚苯胺/膨胀石墨(PANi/EG)导电复合填料,用溶液法对高密度聚乙烯(PE-HD)填充复合,制备出PE-HD/PANi/EG复合材料,实现了PE-HD由绝缘体向半导体的转化。通过X射线衍射、扫描电镜、电导率测量对材料进行了表征,结果表明:PANi/EG复合填料XRD表征初级粒子尺寸小于28nm,SEM表征聚集体粒子尺寸约500nm左右,电导率高于0.5S/cm;复合导电填料质量分数为5%时,电导率达到10-10S/cm,接近抗静电材料的要求。
A polyaniline/expanded graphite (PANi/EG) composite filler was prepared through in situ polymerization of aniline in presence of expanded graphite, which was introduced into PE-HD via solution blending generating composites. XRD measurements showed that the size of primary PANi particles was less than 28 nm, and that of the aggregated particles of PANi and EG was about 500 nm. The conductivity of PANi/EG filler was 0.5 S/cm. When the content of PANi/EG filler in PE-HD was (5 wt%,) the conductivity of the composite reached 10^(-10) S/cm.
出处
《中国塑料》
CAS
CSCD
北大核心
2005年第5期56-58,共3页
China Plastics
基金
陕西省教育厅纳米专项(02JN1-12)
西安科技大学博士创新基金
关键词
高密度聚乙烯
膨胀石墨
聚苯胺
抗静电材料
<Keyword>high density polyethylene
expanded graphite
polyaniline
anti-static material
