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基于AlGaN/GaNHEMT的功率放大器的研究进展 被引量：3

Progress in the Development of Power Amplifiers Based on AlGaN/GaN HEMT's
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摘要 介绍了几类常见的基于AlGaN/GaNHEMT的微波功率放大器;论述了制造微波功率放大器的两种关键工艺技术———倒装芯片集成(FCIC)和共平面线(CPW);分析了自行研制的微波功率放大器核心器件AlGaN/GaNHEMT的性能。 Several commonly used microwave power amplifiers based on AlGaN/GaN high electron mobility transistors (HEMT's) are described. Two major processing tecnologies for microwave power amplifiers,flip-chip IC (FC-IC) and coplanar wire (CPW), are introduced. And finally, AlGaN/GaN HEMT's, the core devie for power amplifiers, are developed, and their characteristics are analyzed.
作者 王冲 刘道广 郝跃 张进城
机构地区 西安电子科技大学微电子研究所
出处 《微电子学》 CAS CSCD 北大核心 2005年第3期245-247,共3页 Microelectronics
基金 国家重大基础研究发展(973)计划资助项目(2002CB311904) 国防预先研究项目
关键词 微波功率放大器 微波集成电路 高电子迁移率器件 ALGAN/GAN 倒装芯片集成 共平面线 Microwave power amplifier MMIC HEMT AlGaN/GaN Flip-chip IC Coplanar wire
分类号 TN325.3 [电子电信—物理电子学]
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参考文献7

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  • 2Tilak V, Green B, Kim H, et al. The influence of barrier thickness on the high power performance of A1GaN/GaN HEMTs [J]. Elec Dev Lett, 2001, 22(6):504.
  • 3Wu Y-F, York R A, Keller S, et al. 3-9 GHz GaN-based microwave power amplifiers with L-C-R broad-band matching [J].IEEE Microwave and Guided Wave Letters,1999,9(8):314.
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  • 5Green B M, Lee S, Chu K, et al. High efficiency monolithic gallium nitride distributed amplifier [J]. IEEE Microwave and Guided Wave Letters, 2000, 5(10) : 270.
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同被引文献18

  • 1RAYMOND S P, SIMON M W. A review of GaN on SiC high electron-mobility power transistors and MMICs [J]. IEEE Trans Elec Dev, 2012, 60 (6): 1764-1783.
  • 2MEFJDOUB F, ZEGSOUI M, GRIMBERT B, et al.First demonstration of high-power GaN-on-silicon transistors at 40 GHz [J]. IEEE Elec Dev Lett, 2012, 33(8) : 1168-1170.
  • 3SAITO W, KAKIUCHI Y, NITTA T, et al. Field- plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs [J]. IEEE Elec Dev Lett, 2010, 31(7): 659-661.
  • 4HILT O, KNAUER A, BRUNNER F, et al. Normally-off A1GaN/GaN HFET with p-type GaN gate and A1GaN buffer [C] // 22nd Int Syrup Power Semicond Dev & IC. Hiroshima, Japan. 2010: 347- 350.
  • 5BAHAT T E, BEUNNER F, HILT O, et al. A1GaN/ GaN/GaN: C back-bamer HFETs with breakdown voltage over I kV and low RONXA [J]. IEEE Trans Elec Dev, 2010, 57(11): 3050-3058.
  • 6NAKAJIMA A, SUMIDA Y, DHYANI M H, et al. GaN- based super heterojunction field effect transistors using the polarization junction concept [J]. IEEE Elec Dev Lett, 2011, 32(4): 542-544.
  • 7SHREEPAD K, JIANYU D, MICHAEL S S, et al. RESURF A1GaN/GaN HEMT for high voltage power switching [J]. IEEE Elec Dev Lett, 2001,22(8) : 373- 375.
  • 8MASATO N, JUN S, TSUNENOBU K. 4H-SiC lateral double RESURF MOSFETs with low on-resistance [J]. IEEE Trans Elec Dev, 2007, 54(5): 1216-1223.
  • 9HUANG W, PAUL T C, NIIYAMA Y, et al. Experimental demonstration of novel high-voltage epilayer RESURF GaN MOSFET [J]. IEEE Elec Dev Lett, 2009, 30(10): 1018-1020.
  • 10HUANG W, PAUL T C, NIIYAMA Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2. 5 kV [C] // Proc 20th Int Syrup Power Semieond Dev & IC. Orlando, FL, USA. 2008: 291- 294.

引证文献3

二级引证文献12

微电子学
2005年 第3期

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