摘要
文章提出了一种高增益宽带共栅CMOS电流模跨阻放大器,从理论上对电路进行了分析。采用0.5μmCMOS工艺进行HSPICE仿真,结果表明,该电路结构能达到57dBΩ跨阻增益,1.5GHz带宽,6.4pA/sqrt(Hz)等效输入总电流噪声;在输入电流为200μA时,其输出电压的动态摆幅达到220mV,功耗仅为76mW。
A novel high-gain and wide-band common-gate CMOS current-mode transimpedance amplifier is presented. A theoretical analysis is made on the amplifier. And a simulation based on 0.5 μm CMOS technology with HSPICE indicates that a transimpedance gain of 57 dBΩ, a bandwidth of 1.5 GHz and a total equivalent input current noise of 6.4 pA/sqrt(Hz) have been obtained for the circuit. The dynamic range of the device is high enough to enable an output swing of around 220 mV for 200 μA input current, while the power dissipation is only 76 mW.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第3期308-310,共3页
Microelectronics
关键词
共栅
电流模
跨阻放大器
高增益
宽带
Common-gate
Current-mode
Transimpedance amplifier
High-gain
Wide-band
