硅纳米线的合成及表征

Synthesis and Characterizations on Si Nanowires

目前已通过气液固生长机理及氧化物辅助生长等机理合成了大量硅纳米线,电镜、能量色散X射线分析、X射线光电子能谱、拉曼光谱、近边X射线吸收精细结构光谱、IV测量、光致发光、场发射、电子输运测量等是表征硅纳米线的有效手段,介绍了硅纳米线在合成及表征方面的最新进展,并对其发展做了展望。

At present, a great quantity of Si nanowires are synthesized by VLS growth mechanism and oxide-assisted growth mechanism. Si nanowire is effectively studied by electron microscopy, energy dispersive X-ray analysis, X-ray photoelectron energy spectrum, Raman spectrum, near edge X-ray absorption fine structure spectrum, I-V, photoluminescence, field-emission and electrical transport measurement. The recent progress on the synthesis and characterizations of Si nanowires are introduced and development prospect is also forecasted.