摘要
用中频磁控溅射工艺分别制备了掺铒Al2O3薄膜和镱铒共掺Al2O3薄膜,室温下测量了它们的光致发光特性。结果表明:镱铒共掺Al2O3薄膜光致发光的峰值强度为掺铒Al2O3薄膜的8倍以上,两者的半值宽度近似相等;泵浦功率增强,掺铒Al2O3薄膜光致发光强度出现饱和趋势,但镱铒共掺Al2O3薄膜的光致发光强度随泵浦功率线性增加。
Er-doped Al_2O_3 films and Yb∶Er co-doped Al_2O_3 films were fabricated respectively using the technique of the medium frequency magnetron sputtering.The photoluminescent characteristics of the films were measured at room temperature.The results show that the PL peak intensity of the Yb∶Er∶Al_2O_3 film is eight times than that of the Er∶Al_2O_3 film,and the full width at half maximum of them is almost the same.The intensity of Er∶Al_2O_3 film trends to the saturation when pump power was increased.However,the intensity of (Yb∶Er∶Al_2O_3) film increases approximately linearly as pump power was increased.
出处
《半导体光电》
CAS
CSCD
北大核心
2005年第3期212-215,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目(69889701)
辽宁省科学技术厅资助项目(20022110)
辽宁省教育厅资助项目(202123198).