CMOS工艺制作的横向多晶硅p^+p^-n^+结的温度特性及其应用

Temperature Characteristics and Application of Lateral Polysilicon p^+p^-n^+Junction Fabricated using CMOS Technology

应用标准CMOS工艺制作了横向多晶硅p+p-n+结,对其正向电流电压的温度特性进行了理论分析和实验研究。实验结果表明:横向多晶硅p+p-n+结的理想因子为1.89;在室温附近(T=27℃),恒定的正向偏置电流(1μA)工作条件下,横向多晶硅p+p-n+结正向压降的温度变化率约为-1.5mV/K,与理论计算值相吻合;并且应用横向多晶硅p+p-n+结正向压降的温度特性,研制成功非致冷红外微测辐射热计,其黑体响应率Rbb(1000K,10Hz)=4.3×103V/W。

The lateral polysilicon p+p-n+ junction is fabricated using a commercial CMOS process. The temperature characteristics of forward current-voltage are theoretically analyzed in detail, and the related experiments are carried out. The experimental results show that the ideal factor of the polysilicon p+p-n+ junction is 1.89. At the room temperature of about 300 K, the temperature coefficient of the foreword voltage at a constant current is about -1.5 mV/K, which is agreement with the theoretical calculation. Based on the temperature characteristics of the polysilicon p+p-n+ junction forward voltage drop, the uncooled infrared microbolometer is developed. The blackbody responsivity Rbb (1000 K, 10 Hz) is 4.3 × 103 V/W.