摘要
Mercuryselenide is a zero-gap semiconductor of Ⅱ- Ⅵ-family. The iron-doped modification HgSe:Fe has a "Fermi-level pinning" beyond the electron concentration of 5 × 1018 cm-3. Due to the short-range correlation of Fe + +/Fe + + +system, a dramatic increase of carrier mobility is observed, so that any quantum effect in 3D, 2D, 1D, and 0D is well detected. Applying molecular-beam epitaxy for the sample preparation, we present magnetospectral data of selected samples of this compound demonstrating various features in magnetic fields up to 1000 T by applying different field generators. The resulting data are explained in connection with suitable theoretical concepts basing on the k * p-method as well as on the tightbinding approximation.
Mercuryselenide is a zero-gap semiconductor of Ⅱ-Ⅵ-family. The iron-doped modification HgSe:Fe has a “Fermi-level pinning” beyond the electron concentration of 5×10 18 cm -3 . Due to the short-range correlation of Fe ++ /Fe +++ -system, a dramatic increase of carrier mobility is observed, so that any quantum effect in 3D, 2D, 1D, and 0D is well detected. Applying molecular-beam epitaxy for the sample preparation, we present magnetospectral data of selected samples of this compound demonstrating various features in magnetic fields up to 1000 T by applying different field generators. The resulting data are explained in connection with suitable theoretical concepts basing on the k *p-method as well as on the tight-binding approximation.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期161-164,共4页
Journal of Infrared and Millimeter Waves
关键词
硒化汞
离子掺杂
无隙半导体
铁
磁谱观察
iron-doped mercuryselenide HgSe: Fe
infrared magnetotransmission
magnetospectrum
magnetoresistance
magnetic ficlds up to 1000 T
