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SiC边界层陶瓷电容器的制备和性能特点 被引量:2

Investigation on SiC Ceramic Grain Boundary Capacitors
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摘要 陶瓷电容器,尤其是边界层陶瓷电容器由于具有许多优良的性能,而越来越受到人们的重视。通常用于陶瓷电容器的材料是具有弛豫铁电性能的钛酸盐类材料。本文则介绍了将SiC材料用于制备陶瓷电容器,结果发现,电容器的介电常数高达2910000,远远高于传统材料;而同时,其介质损耗也非常高。在此,对降低损耗的工艺过程进行了探讨。 The ceramic capacitors, especially for the grain boundary cerami c capacitors, have recently received considerable concern for the unique propertie s.The relaxation materials of titanates are conventionally used as the matrix fo r ceramic capacitors. In this study, the ceramic capacitor of SiC matrix was rev iewed.The result shows that the dielectric constant is up to 2 910 000, which is much higher than that of conventional ceramic capacitors. Nevertheless, very la rge dielectric losses were detected. Several ways were proposed to lower the die lectric losses.
出处 《硅酸盐通报》 CAS CSCD 北大核心 2005年第3期77-80,共4页 Bulletin of the Chinese Ceramic Society
基金 河南省杰出青年基金资助(512002200).
关键词 SiC边界层陶瓷电容器 制备方法 钛酸盐类材料 介电常数 ceramic capacitor SiC dielectric constant dielectric loss
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  • 1Chung Sung - Yoon, Lee Byoung - Ki, Kang Suk - Joong.Core - shell structure in Nb2O5 - doped SrTiO3 by oxygen partial presure change. J Am Ceram Soc, 1998, 81(11): 3016~3018
  • 2Cross L E, Jang S L, Newnham R E. Large electrostrictive effects in relaxor ferroelectrics. Ferroelectrics, 1980, 23: 187~192
  • 3Burn I, Neirman S. Dielectric proporties of donor-doped polydry- stalline SrTiO3. Mater Sci, 1982, 17:3510 ~3524
  • 4Hwang H J, Niihara K. Fabrication of surface barrier layer capacitor on BaTiO3 - based composite containing particulate SiC.J Mater Res, 1998, 13(10): 2866~2870
  • 5Kim B G, Cho S M, KimT Y, et al, Giant dielectric permitivity observed in Pb - based perovskite ferroelectrics. Phys Rev Lett,2001, 86(5): 3404~3406
  • 6Treu M, Burte E P, Schorner R, et al. Reliability of metal oxide- semiconductor capacitors on nitrogen implanted 4Hsilicon carbide. J Appl Phys, 1992, 84: 2943 ~ 2945
  • 7Cho W J, Kosugi R J, Senzaki J J, et al. Study on electron trapping and interface states of various gate dielectric materials in 4H - SiC metal - oxide - semiconductor capacitors. Appl Phys Lett, 2000, 77 (13): 2054 ~ 2056
  • 8Zhang Rui, Gao Lian, Wang Hailong, et al. Dielectric properties and space charge behavior in SiC ceramic capacitor. Appl Phys Lett, 2004, 85:1301 ~ 1303
  • 9UonHippel A R. Dielectric and Waves. New York: Wiley,1954

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