一类半导体方程组整体弱解的存在性

Existence of Global Weak Solutions to a Class of Semiconductor Equations

考虑一类半导体方程组的混合初边值问题。利用正则化算子和逼近过程,通过一系列先验估计,在迁移率既不为常数,又不满足速度饱和的条件下,证明了其整体弱解的存在性.

<Abstrcat> Some mixed initial boundary value problems of the semiconductor equations were studied. Using the regularization operator and approach process and a series of prior estimates, the existence of the global weak solutions was proved under the conditions that the mobility neither equals to a constant nor satisfies velocity saturation.