摘要
本文利用紧束缚的格林函数方法,确定了Gap中P_(Ga)反位缺陷的波函数为深能级E的函数。理论给出反位原子上的超精细相互作用常数,同实验符合得很好,定性说明了GaP中P_(Ga)反位缺陷的次近邻原子有向外驰豫的趋势。
The electronic wave function which is the function of the P_(Ga) defect energy is de-rived using a tight binding Green function thechnique. The hyperfine interaction constants of the an-tisite phosphorus given by the theory , are in good agreement with experimental results. It is predict-ed qualitatively that the nearest neighbor atoms of antisite phosphorus have a outward relaxationtrend.
出处
《郑州大学学报(自然科学版)》
CAS
1994年第3期52-55,共4页
Journal of Zhengzhou University (Natural Science)
关键词
半导体
电子结构
磷化镓
反位缺陷
semiconductor material
electronic structure
GaP/antisite defect