ICB方法生长CdTe单晶薄膜的研究

Study of Monocrystalline CdTe Films Grown by ICB Epitaxy

用ＩＣＢ外延技术在ＮａＣｌ（１００）和Ｓｉ（１１１）衬底上生长了ＣｄＴｅ单晶薄膜．Ｘ光衍射、电子背散射通道及ＲＨＥＥＤ都表明获得了良好的单晶结构及平滑膜面．外延取向关系为ＣｄＴｅ（１００）／ＮａＣｌ（１００）和ＣｄＴｅ（１１１）／Ｓｉ（１１１）．实验发现，生长温度小于２３０℃时，外延膜呈闪锌矿（立方）和钎锌矿（六方）的混合相结构．薄膜生长体现出团粒束淀积的规律，即随着团粒能量的增大，ＣｄＴｅ外延膜的结晶质量显著提高．在Ｓｉ衬底上，外延得到的最好的ＣｄＴｅ膜，其双晶衍射摆动曲线半高宽为１１弧分左右．

Abstract Epitaxial films of CdTe were grown on NaCl(100) and Si(111) substrates by Ionized Cluster Beam epitaxy. X-ray diffraction, electron channelling patterns and RHEED analyses indicated that good monocrystallinity and surface flatness have been achieved. The epitaxial orientation relationships are CdTe (100)/NaCl(100) and CdTe(111)/Si(111). It was found that, when substrate temperatures were lower than 230°C, the structure of epitaxial films was a mixed cubic-hexagonal phase. The quality of the CdTe epilayer improved significantly with the increase of the kinetic energy of the CdTe clusters. The best CdTe epilayer grown on Si substrates exhibited a CdTe(111) DCRC having the FWHM of 11 arcm.