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铁电薄膜/半导体异质结构的研究进展 被引量：2

Research Progress in Ferroelectric Thin Film/Semiconductor Heterostructure
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摘要 综述了铁电薄膜/半导体异质结构研究近年来的新进展。重点介绍了异质结构制备工艺的改进和界面的最新研究状况。简单叙述了全钙钛矿异质结构的发展情况。指出了铁电薄膜/半导体异质结构研究领域需要解决的一些问题。 Recent studies on ferroelectric thin film/semiconductor heterostructure are discussed in this paper. Improvement of heterostructure processing methods, interface studies and development of all-perovskite heterostructure are introduced. Some key problems on heterostructure study are outlined.
作者 向飞 刘颖 朱时珍
机构地区 北京理工大学材料科学与工程学院
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第3期450-453,486,共5页 Journal of Synthetic Crystals
关键词 铁电薄膜 异质结构 缓冲层 界面 全钙钛矿 ferroelectric thin film heterostructure buffer layer interface all-perovskite
分类号 O484 [理学—固体物理]
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参考文献27

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二级参考文献4

  • 1黄龙波,李佐宜,刘兴阶,缪向水,卢德新.铁电(Pb_(0.925)La_(0.075))(Zr_(0.65)Ti_(0.35))_(0.981)O_3薄膜的疲劳特性研究[J].科学通报,1995,40(5):469-471. 被引量：3
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人工晶体学报
2005年 第3期

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