VHF-PECVD制备微晶硅薄膜及其微结构表征研究

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

采用VHFPECVD技术制备了系列不同衬底温度的硅薄膜。运用微区拉曼散射(MicroRaman)和X射线衍射(XRD)对薄膜进行了结构方面的测试分析。MicroRaman测试结果表明:随衬底温度的升高,薄膜逐渐由非晶向微晶过渡,晶化率(Xc)逐渐增大。XRD的结果显示样品的择优取向随衬底温度的升高而变化,(220)方向计算得出样品的晶粒尺寸逐渐变大。

A series of microcrystalline silicon films prepared at the different substrate temperature (Ts) using VHF-PECVD were analyzed by micro-Raman spectroscopy and X-ray diffraction. The results of micro-Raman spectroscopic measurement evidently showed that the structures of samples evaluated from amorphous to microcrystalline with the increase of Ts. The preferable direction derived from XRD measurement gradually changed with the increase of Ts. The higher Ts gives, the larger grain sizes are.