Si(111)衬底上ZnO薄膜的磁控溅射法制备及表征

Preparation and Characterization of ZnO Films Grown by Magnetron Sputtering on Si(111) Substrates

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜,并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化,应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析,可观测到明显的紫光发射(波长为380nm左右)。实验结果表明,用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

ZnO thin films were grown by magnetron sputtering technique on Si(111) substrates. The influence of annealing temperature on the quality, grain size, stress distribution and photoluminescence of ZnO films was discussed. X-ray diffraction patterns indicate that the films are c-axis oriented. The stress of the films changes with annealing temperature, and the optimum annealing temperature is about 500°C according to the stress analysis. The emission spectra excitated by 325 nm were measured at room temperature, and a 380 nm emission was observed. These results suggest that high quality ZnO thin films can be obtained by magnetron sputtering technique on the silicon substrates.