摘要
Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped resist scatters outward and reattaches to the film surface. So, the scattered resist is removed by the exhaust flow generated at the gap between the wafer edge and the catch cup. It is seriously concerned that the stripes called Ekman spiral vortices appears on the disk in the case of high rotating speed and the film thickness increases near the wafer edge in the case of low rotating speed, because it prevent the formation of uniform film. The purpose of this study is to make clear the generation mechanism of Ekman spiral vortices and the influence of exhaust flow on it Moreover the influence of the catch cup geometry on the wafer surface boundary layer flow is investigated.
