P型＜100＞硅外延埋层图形畸变与晶向偏离度的关系

The Relationship of Pattern Distortion in Epitaxial Buried Layer to Orientation Deviation in P-Type (100) Silicon

本文指出，在影响Ｐ型（１００）硅处延埋层图形畸变的诸因素中，衬底晶向偏离度是决定性的。并进一步指出，Ｐ型（１００）硅衬底主晶向朝最近（１１０）晶向偏离２～３°时可得到满意的埋层图形。该角度为最佳偏离度。这一实验结果对国内外现行的有关标准提出异议。本文从外延生长微观机制和生长动力学对产生外延埋层图形畸变的原因和实验结果进行了讨论。

For p-type (100) silicon substrate, the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer. It has been pointed out further, that better pattern can be obtained when the orientation of the p-type (100) water deviates by 2-3° toward the nearest (110) axis. It is different from the current standard of epitaxial growth home and abroad. In this paper, the results and the reason of forming pattern distortion have been discussed based on its micromechanism and growing dynamics.