GaAs器件工艺中等离子刻蚀及计算机辅助监控技术研究

Computer-Controlled Plasma Etching and Endpoint Detection in the GaAs Devices Processing

用Ｎ２气和ＮＦ３反应气体，在较低的刻蚀功率下实现了用薄正性光刻胶ＡＺ１５１８作掩模，均匀、快速刻蚀ＳｉＯ２，ＳｉＯＮ，Ｓｉ３Ｎ４，ＷＮ，Ｗ等材料的等离子刻蚀技术。利用到蚀过程中射频参数的变化和计算机技术，将射频参数的变化在计算机屏幕上实时显示，实现了计算机辅助监控和终点检测技术。

he research of plasma etching with NF3/N2 shows that high etching rates and good etching uniformities for materials such as SiO2,SiON,Si3N4,WN and W at low RF power,with thin masked AZ1518 photoresist can be obtained. The varieties of RF parameters during the etching processing have been applied to monitor and control the plasma etching with computer technology.