氧本征吸除低温退火工艺的研究和改进

The Investigation and Improvement of Low Temperature Annealing Process in Intrinsic Gettering Technique

讨论了硅片中氧沉淀形成的机理，推荐一种本征吸除的改进技术，用以增强吸除效果。在本征吸除工艺的低温退火中，用连续的线性升温退火代替常规的恒温退火。采用改进的本征吸除工艺后，可增加硅片表面ＭＯＳ结构少子产生寿命和降低Ｐ＋Ｎ结二极管的反向电流。

he formation mechanism of oxygen precipitates in the interior bulk region of silicon wafer is discussed. An improved intrinsic gettering (IG) technique is proposed for enhancing the iG effectiveness. During low temperature annealing step of IG process, a continuous linear raising of annealing temperature is used instead of the constant annealing temperature. The improved iG technique can be used to obtain an increment of generation lifetime of minority carrier in MOS structure and a reduction of reverse current in P+N junction.