摘要
多孔硅(PorousSilicon)是晶体硅于氢氟酸溶液中在硅衬底上形成的多孔态的硅材料。PS可见光区的强烈光辐射使其成为世界范围的研究焦点。本文用电化学方法制得了PS结构,扫描电子显微镜(SEM)的结果表明PS是一个硅的毫微结构量子线的网络,光致发光(PL)谱表明PS发可见红光,而喇曼光谱显示一个在516cm(-1)附近的非对称峰,说明PS是一种新型的硅材料。
Porous Silicon (PS)is a porous morpholgical form of silicon formed on the crystalline Si substrate by anodization in HF solution. The intensively visible lightemission from PS layer made it becoming the world-wide research point. In this paper,we review what we have done about the PS. Using electrochemical dissolution,we have obtained the PS structure. The result of SEM showed that PS is a quantum wire network of Si nanostructure,PL spectrum showed that PS emits visible red light, and the Raman spectrum indicated an asymmetric peak near 516 cm(-1). This means PS is a new type material of Si.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第2期147-150,共4页
Research & Progress of SSE
关键词
多孔硅
喇曼光谱
微结构
硅
Porous Silicon,Electrochemical Etching,Photoluminescence, Raman Spectrum