摘要
贯穿晶片的背面通孔已成为ＧａＡｓＭＭＩＣ和功率ＭＥＳＦＥＴ的有效接地方式。本文介绍了利用Ｃｌ２／ＳｉＣｌ４作为反应气体，以正性光刻胶为掩模的反应离子刻蚀背孔工艺。利用该工艺刻蚀出的深孔具有倾斜的剖面和光滑的侧壁，孔的横向侧蚀小，在５０ｍｍＧａＡｓ圆片上获得了良好的均匀性和重复性。
Through substrate via holes are essential in many GaAs MMICs and power MESFETs. A RIE process has been developed to etch via holes using Cl2/SiCl4 mixture and photoresist as the mask material. Smooth V-shape hole profiles with little horizontal undercutting were obtained. The uniformity and reproducibility on 50 mm GaAs wafers were good.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第2期168-171,共4页
Research & Progress of SSE
基金
国家自然科学基金
