氢化非晶硅中空穴与电子的俘获效应──PIN型非晶硅太阳能电池稳定性研究

Hole and Electron Trapping Effects in Hydrogenated Amorphous Silicon(α-Si: H)-A Study of Stability of PIN Solar Cells

通过应用Ｓｃｈａｒｆｅｔｔｅｒ－Ｇｕｍｍｅｌ解法数值求解Ｐｏｉｓｓｏｎ方程，对经高强度光辐照过的ＰＩＮ型非晶硅太阳能电池进行计算机数值模拟。结果表明，载流子俘获效应所造成的α－Ｓｉ：Ｈ中空间电荷净增加或减少都会使电池内部电场分布发生改变和准中性区（低场“死层”）的出现，使电池性能因光的长期辐照而衰退。本文还讨论了α－Ｓｉ：Ｈ中载流子俘获效应的研究在高稳定性ＰＩＮ型非晶硅太阳能电池研制中的重要性。

A computer simulation model of hydrogenated amorphous silicon (α-Si: H) PIN solar cells subjected to light irradiation has been developed by using Scharfetter-Gummel solution of Poisson's equation. The results indicate that due to carrier trapping, the increased or decreased space-charge density changes the electric field distribution and leads to a wider quasi-neutral region (low-field "dead layer") in the i layer, resulting in light-induced degradation of solar cell performances. We also discuss the importance of carrier trapping effects to the stability of PIN α-Si: H solar cells.