摘要
叙述了外内向功率波复数比的测量方法,给出了散射参数测量的交互换位双信号测量线方法。用此方法测量了双栅GaAsMESFET适用散射参数,并用它设计S波段混合集成双栅GaAsMESFET可控增益放大器。测试结果与设计吻合。
This article describes a method of measuring the complex ratio of return power waves to incident power waves,and presents the interchanged 'two-signal' method of measuring the scattering parameters by slotted line.The measured applicable scattering parameters of dual-gate GaAs MESFET by this method are used to design S-band variable gain amplifiers. The measured results of the variable gain amplifier agree well with the designed ones.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第3期272-276,共5页
Research & Progress of SSE
关键词
散射参数
双栅
场效应晶体管
GAAS
Scattering Parameters Measurement,Dual-Gate GaAs MESFET,Variable Gain Amplifier