摘要
报道了用低压化学汽相淀积生长掺砷多晶硅的实验结果。应用掺砷多晶硅作发射板材料,研制出C波段连续波输出功率大于3W的晶体管和L,P波段100W的脉冲功率晶体管。
Experimental growth results of arsenic doped polycrystalline silicon (As-DOPOS) films by low pressure chemical vapor deposition are presented.C band 3 W CW Si bipolar transistor and L and P bands 100 W silicon bipolar pulsed power transistors have been developed by utilizing the arsenic doped polycrystalline silicon for emitter region.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第3期241-245,共5页
Research & Progress of SSE