掺砷多晶硅在微波晶体管中的应用

The Application of Arsenic Doped Polycrystalline Silicon for Microwave Transistors

报道了用低压化学汽相淀积生长掺砷多晶硅的实验结果。应用掺砷多晶硅作发射板材料，研制出Ｃ波段连续波输出功率大于３Ｗ的晶体管和Ｌ，Ｐ波段１００Ｗ的脉冲功率晶体管。

Experimental growth results of arsenic doped polycrystalline silicon (As-DOPOS) films by low pressure chemical vapor deposition are presented.C band 3 W CW Si bipolar transistor and L and P bands 100 W silicon bipolar pulsed power transistors have been developed by utilizing the arsenic doped polycrystalline silicon for emitter region.