两次线性电压扫描法测量半导体的产生参数

Twice Linear-voltage Sweep Method for Determining Generation Parameter of Semiconductor

采用形式简单但较为精确的Ｐｉｅｒｒｅｔ的产生区宽度模型，分析了线性扫描电压作用下ＭＯＳ电容器的电容一时间（Ｃ—ｔ）瞬态特性。在此基础上，建议了一种通过两次不同电压扫描率的线性电压扫描来测定半导体的体产生寿命和表面产生速度的方法。

Using Pierret's model for generation width, which is simple but precise, we analyse the C-t transient characteristic of an MOS capacitor under the linear-sweep voltage. On the basis of this, a method of using twice sweep under different voltage sweep rates for determining both bulk generation lifetime and surface generation velocity is proposed.