掺入杂质级等价元素锗的CZSi晶体性能研究

Study of CZSi Characteristic Doped with Element Ge at Impurity Level

直拉硅单晶中掺入等价元素锗可以有效地抑制氧施主，提高硅片机械强度，改善氧沉淀的状况。研究了锗的最低有效浓度并探讨了其机理。

Equivalent element Ge doped in silicon results in suppressing the concentration and produce rate of oxygen donors, increasing the mechanical strength of silicon wafer and improving the oxygen precipitation. In this paper, we investigated the lowest effective concentration of Ge in silicon, and discussed above phenomena.