摘要
提高硅太阳电池的转换效率主要在于提高开路电压Ｖ（ｏｃ）和短路电流密度Ｊ（ｓｃ）。采用减薄硅片衬底厚度和光陷阱技术可望使转换效率达到２９％。
The high efficiency of silicon solar cell depends on the increasements of open circuit voltage (V(oc)) and short current density (J(sc)). It is possible to get 29% efficiency by reducing wafer thickness and employing light trapping technology.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第4期347-351,共5页
Research & Progress of SSE
