摘要
从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。
In this paper, from quantum mechanics basic theory, we have drawnout that the effective bandgap increment of porous silicon (PS) is Photoluminescene (PL) phenomena of the PS have also been explained according to quantum confinement effect (QCE) and effect of surface state.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第4期317-322,共6页
Research & Progress of SSE
关键词
多孔硅
光致发光
量子限制效应
量子力学
分析
Porous Silicon (PS), Photoluminescene (PL), Quantum Confinement Effect (QCE)
