摘要
分析了在纳秒与皮秒级脉冲激光辐照下的半导体材料表面温度变化的机理。研究了通过测量材料蒸发原子的飞行时间来确定靶表面点阵温度的原理和实验方法,它对于研讨激光束与半导体材料相互作用的机理是至为重要的。
The mechanism of temperature change of semiconductor material surface irradiated by nanosecond and picosecond laser pulses is analysised.The principle and the experimental method for the lattice temperature measurements at the target surface via a time-of-flight of evaporated atoms are investigated.It will be of great significance to the mechanism research of interaction of laser radiation with semiconductor materials.
出处
《光电子技术》
CAS
1994年第1期50-53,共4页
Optoelectronic Technology
关键词
半导体材料
激光脉冲
表面温度
time-of-flight
Maxwellian distribution
quadrupole mass spectrometer
