期刊文献+

ZnS:Sm,F红色ACTFEL器件 被引量:2

Red Emission AC Thin Film Electroluminecent Device with ZnS:Sm,F Phosphor Layer
下载PDF
导出
摘要 介绍了一种采用 ZnS:Sm,F 薄膜作为发光层的红色 ACTFEL 器件,并对该 ACTFEL 器件的发光机理进行了讨论。 A type of red emission ACTFEL device with ZnS:Sm,F phosphor layer is developed.The emission mechanism of this ACTFEL device is also discussed.
作者 谢相伟
出处 《光电子技术》 CAS 1994年第2期138-141,共4页 Optoelectronic Technology
关键词 电致发光 红色发光 ACTFEL器件 ACTFEL red emission separated emission center
  • 相关文献

同被引文献19

  • 1张华.蓝色荧光硫化锌材料的制备及其发光特性[J].山东理工大学学报(自然科学版),2006,20(6):93-96. 被引量:1
  • 2Jan Ziegler, Shu Xu, Erol Kucur,et al. Silica-Coated InP/ZnS Nanocrystals as Converter Material in White LEDs[J]. Advanced Materials, 2008, 20:4068 - 4073.
  • 3Vlasenko N A, Denisova Z L,Kononets Ya F.et al. On Origin of Rapid Portion of Luminance-voltage Dependence of ZnS:Mn TFEL Devices and its Aging Behavior[J]. Semiconductor Fhysics. Quantum Electronics & Optoelectronics, 2002, 5(1) : 58 - 62.
  • 4Xiaosheng Fang, Yoshio Bando,Guozhen Shen,et al. Ultrafine ZnS Nanobehs as Field Emitlers[J]. Advance Materials. 2007, 19 : 2593 - 2596.
  • 5Hillie K T,Swart H C.Electron beam Induced Degradation of a Pulsed Laser Deposited ZnS:Cu. Au,Al Thin Film on a Si(100) Substrate[J].Applied Surface Science,2001,183 (3- 4) :304- 310.
  • 6Hua R N, Niu J H, Li M T, et al. Electroluminescent Properties of Device based on ZnS:Tb/CdS Core-shell Nanocrystals[J].Chemical Physics Letters,2006,419(1-3): 269 - 272.
  • 7Souriau J C,Jiang Y D,Penczek J,et al. Calhocioluminescent Properties of Coated SrGa:S4:Eu^2+ and ZnS:Ag, Cl Phosphors for Field Emission Display Applications[J]. Materials Science and Engineering B.2000,76(2-3):165-168.
  • 8Davis C M,Curran K A.Manipulation of a Schlenk l,ine Preparation of Tetrahydrofuran Complexes of Transition-metal Chlorides[J].Chemical Education. 2007, 84(11): 1822- 1823.
  • 9Haranath D,Sharma P,Chander H,et al. Role of Boric Acid in Synthesis and Tailoring the Properties of Calcium Aluminale Phosphor[J]. Materials Chemistry Physics, 2007, 101(1) : 163 - 169.
  • 10Lee J C,Park D H.Self-defects Properties of ZnS with Sintering Temperature[J].Materials Letters, 2003, 57( 19): 2872 - 2878.

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部