摘要
研究了以 WO_3为靶材,采用射频磁控溅射沉积 WO_y 电致变色膜。并对 WO_y 膜的沉积速率、光学常数及电致变色特性等与沉膜工艺参数之间的关系进行了测量研究。
The WO_y films were prepared by rf reactive magnetron sputtering with sin- tering WO_3 target.The influence of depositing parameters on depositing rate,refrative in- dex and electrochromic properties of deposited WO_3 films was studied.
出处
《光电子技术》
CAS
1994年第3期215-218,共4页
Optoelectronic Technology
关键词
氧化钨
薄膜
射频
磁控溅射
electrochromism
WO_3 thin film
rf magnetron sputtering
