摘要
分析正、负电子亲和势在发射机理上的差别,重点阐述 GaAs 光阴极的设计原理。讨论这种阴极参数的设定依据,扼要介绍它的主要制作工艺。最后,和传统的光阴极作了比较,并就其优越性进行了综合性讨论。
The principle of GaAs photocathode design is discribed by analyzing the dif- ferents between PEA and NEA on emission mechanism.Main manufacturing technique is introduced after discussing the select basis of the photocathode parameter.Finally,the ad- vantage of this photocathode over traditional one is also discussed.
出处
《光电子技术》
CAS
1994年第3期183-189,共7页
Optoelectronic Technology
关键词
砷化镓
光阴极
电子
亲合力
negative electron affinity
GaAs photocathode
heterojunction surface barrier
