阴极射线辐照纯绿GaP发光二极管中深能级的研究

Deep Level Studies on Cathode Ray-Irradiated GaP Pure Green Light-Emitting Diodes

利用深能级瞬态谱(DLTS)方法研究了阴极射线辐照 GaP 纯绿发光二极管(LED)中的深能级,测量到两个激活能为0.45 eV、0.66 eV 的电子陷阱和一个激活能为0.33 eV 的空穴陷阱。证实了0.66 eV 的电子陷阱和0.33 eV 的空穴陷阱与辐照引起的晶格缺陷有关,同时发现阴极射线辐照引起谱峰加宽。

Deep levels in cathode ray-irradiated GaP pure green(PG)light-emitting diodes(LEDs)were investigated by deep-level transient spectroscopy(DLTS).Two elec- tron traps and a hole trap were observed in the samples.The activation energies of the traps are 0.45 eV,0.66 eV,0.33 eV,respectively.It is found that the electron trap(0.66 eV)and the hole trap(0.33 eV)are related to the lattice defects resulting from cathode ray-irradiation and the peak width of the DLTS spectrum is broadened by irradiation.The influence of deep levels on the luminescence efficiency of the LEDs was discussed.