常压化学气相淀积多晶硅的计算机模拟

Computer Simulation of Polysilicon Films Prepared by APCVD

推导出常压化学气相淀积多晶硅膜的计算机模拟算式，并进行了计算机模拟计算。在理论计算的基础上，用硅烷热分解，制备了均匀性较好的用于可控硅元件欧姆接触的多晶硅膜。

Computer simulation of polysilicon films prepared by APCVD has been perbrmed.Therecurrence formulae are :where G(x)is the depositing rate of film and n(x+Δx)is the conversion efficiency of silane. With n(0)=0and the parameters given,a series of theoretical curves showing hte variationof the depositing rate with the substrate position x can be calculated.It has been found thatthe theoretical curves are approximately in agreement with experimental results.