摘要
Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
基金
This work was supported by the Chinese Academy of Sciences within"The Hundred Talent Projecr"(99-019-122288)
National High Technical Research and Development Programme of China(No.2001AA513060)
the 10th Five-Year Plan of Guangdong Province(A1100501)
the National Natural Science Fundation of China(No.50376067).
