摘要
For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma CVD was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies o f Iodine included carbon films showed flat surfaces for each samples. On the str ucture of films estimated by Raman spectroscopy, amorphous carbon was recognized . And I2 peaks were observed in XPS spectra. As a result of friction test, frict ion coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of fricti on coefficient was recognized. Iodine inclusion for carbon materials can be achi eved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-inc luded carbon showed lower than of without iodine
For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma CVD was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies o f Iodine included carbon films showed flat surfaces for each samples. On the str ucture of films estimated by Raman spectroscopy, amorphous carbon was recognized . And I2 peaks were observed in XPS spectra. As a result of friction test, frict ion coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of fricti on coefficient was recognized. Iodine inclusion for carbon materials can be achi eved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-inc luded carbon showed lower than of without iodine
