摘要
概述了中子对半导体材料的位移损伤函数及损伤能力的表征,并选用ASTM标准的E722-94给出的Si及GaAs位移损伤函数,用MCNP粒子输运程序计算了Maxwell裂变谱源、Gaussian聚变谱源对Si及GaAs半导体材料的位移损伤以及相对于1MeV单能中子源的损伤等效系数等。
<Abstrcat> Displacement damage function and damage level characterization of semiconductor material irradiated by neutron is summarized. With damage function from ASTM E722-94,the displacement damage of Si and GaAs irradiated by Maxwell fission neutron and Gaussian fusion neutron is calculated by MCNP program as well as equivalent parameter of damage for 1MeV neutron.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2005年第4期376-379,共4页
Nuclear Electronics & Detection Technology
关键词
中子
半导体
位移损伤
neutron
semiconductor
displacement damage
