摘要
介绍了ｎ－ＩｎＰ／ｐ－ＩｎＧａＡｓＰ／０－ＩｎＰ结构的异质结光电三极管制作过程，并获得了对１．３μｍ的入射光，光增益达２２０，用带尾纤的ＧａＡｓ／ＧａＡｌＡｓ发光管测量，光学增益达１４７０。
Preparation of n-InP/p-InGaAsP/n-InP heterojunction phototransistor is presented whose emitting wavelength is 1.3μm with optical gain 220. The Gain is up to 1470 as measured by GaAs/GaAlAs LED with pitail fiber.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第4期363-366,共4页
Semiconductor Optoelectronics
关键词
异质结
光电三极管
光增益
Heterojunction Phototransistor, Optical Gain
