期刊文献+

半导体材料的霍耳测量 被引量:2

Hall Measurement of Semiconductor Materials
全文增补中
导出
摘要 利用霍耳效应研究半导体材料的电阻率,载流子浓度和迁移率是霍耳测量的主要技术之一。文章简单介绍了HL5500霍耳测量系统;列举了用该霍耳系统测量的各种半导体材料,特别是高阻和高迁移率材料的结果,并讨论了有关的干扰问题。 Using the Hall effect for determine resistivity, carrier concentration and moboility of semiconductor materials is one of the major techniques of Hall measurement. In this paper. HL5500 Hall Measurement system is introduced briefly. The results measured by the Hall system are enumerated on varieties of semiconductor materials,especially the materials with high resistivity and high mobility. The problem of interference is discussed.
作者 罗江财
出处 《半导体光电》 CAS CSCD 北大核心 1994年第4期381-384,共4页 Semiconductor Optoelectronics
关键词 霍耳测量 半导体材料 电阻率 载流子浓度 迁移率 Hall Measurement, Semiconductor Materials, Resistivity, Carrier Concentration, Mobility
  • 相关文献

同被引文献19

  • 1刘新福,孙以材,刘东升.四探针技术测量薄层电阻的原理及应用[J].半导体技术,2004,29(7):48-52. 被引量:53
  • 2赖发春,瞿燕,詹仁辉,林丽梅,盖荣权.退火对TiO_2和Ta_2O_5光学薄膜的结构和光学性质的影响[J].福建师范大学学报(自然科学版),2006,22(1):53-56. 被引量:3
  • 3林丽梅,赖发春,林永钟,瞿燕,盖荣权,陈超英.热处理对直流磁控溅射ITO薄膜光电学性质的影响[J].福建师范大学学报(自然科学版),2006,22(3):42-46. 被引量:15
  • 4Hamberg I, Granqvist C G. Evaporated Sn-doped In2O3 films : Basic optical properties and applications to energy-efficient windows [J]. J. Appl. Phys. R, 1986, 60 (11) : 123-159.
  • 5Hu Yalan, Diao Xungang, Wang Cong, et al.. Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering [J]. Vacuum, 2004, 75: 183-188.
  • 6Wu Wenfa, Chiou Bishiou. Effect of oxygen concentration in the sputtering ambient on the microstructure,electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films [J]. Semicond. Sci.Technol, 1996, 11: 196-202.
  • 7Qiao Zhaohui, Mergel D. Comparison of radio-frequency and direct-current magnetron sputtered thin In2O3: Sn films [J]. Thin Solid Films, 2005, 484.. 146-153.
  • 8Wang R X, Beling C D, Fung S, et al. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films [J]. J. Appl. Phys. , 2005, 97 (3): 033504.
  • 9Ederth J, Johnsson P, Niklasson G A, et al.. Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles [J]. Phys. Rev. B, 2003, 68 (15): 155410.
  • 10Swanepoel R. Determination of the thickness and optical constants of amorphous silicon [J]. J. Phys. E.. Sci. Instrum. , 1983, 16: 1214-1222.

引证文献2

二级引证文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部