摘要
用惰性气体凝聚淀积技术制备半导体Ge团簇及其构成纳米薄膜。利用透射电子显微镜(TEM)、原子力显微镜(AFM)及光谱分析方法对所获得的样品进行分析研究。分别在室温和液N2冷却条件下获得了具有2种不同微结构和形貌特征的氧化层包裹的Ge团簇组装薄膜。紫外可见光光谱分析表明,这类纳米结构薄膜具有1.0～2.9eV的光学带隙蓝移,并可用量子限制效应来解释其起源。
Ge clusters and their assembled nanofilms were prepared by means of the inert-gas condensation method and analyzed by electron microscope and UV-visible photo spectrophotometry. Two kinds of nanostructured films assembled from Ge clusters covered with oxide shells were obtained with different microstructure and morphology. Spectrophotometric measurements were performed for these samples in ultraviolet, visible and near-IR region, and show obvious blue-shift of the optical band gap as large as 1.0-2.0 eV in comparison with the bulk, which can be explained by quantum confined effect.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2005年第7期802-805,共4页
Journal of Optoelectronics·Laser
关键词
惰性气体冷凝
Ge团簇
光学带隙蓝移
Atomic force microscopy
Electron microscopes
Energy gap
Film preparation
Inert gases
Microstructure
Nanostructured materials
Optical properties
Semiconducting germanium
Spectrophotometry
Transmission electron microscopy
