摘要
研究了在磁控溅射中溅射气压、溅射电压(溅射功率)与金属Au、Ta薄膜应力的关系,分析了相关的机理,给出了一种用磁控溅射法制备低应力Au、Ta薄膜的方法,就应力的产生因素作了一些探讨。
This paper addressed the relation of deposited metal Au, Ta film stresses and the sputtering parameters, such as gas pressure and power of magnetron system. The interrelated mechanism was also analysed. A method was presented to make low-stress metal films deposited by dc magnetron sputtering. The origin of the stress in the deposited films was also discussed.
出处
《中国机械工程》
EI
CAS
CSCD
北大核心
2005年第14期1313-1315,共3页
China Mechanical Engineering
关键词
MEMS
磁控溅射
张应力
压应力
MEMS
magnetron sputtering
tensile stress
compressive stress