Si(100)衬底上取向生长La_(0.8)Sr_(0.2)MnO_3(110)薄膜

La_(0.8)Sr_(0.2)MnO_3(110) Thin Films Grown on Si(100) Substrate

利用对向靶磁控溅射方法在Φ60mmSi(100)衬底上得到了择优取向生长的La0.8Sr0.2MnO3(110)薄膜.当沉积温度为500℃时,在40nm缓冲层SrMnO3上,La0.8Sr0.2MnO3薄膜沿(110)取向生长.提高沉积温度到750℃时,厚度为12nm的SrMnO3缓冲层就可以实现La0.8Sr0.2MnO3薄膜的(110)取向择优生长.

La_ 0.8Sr_ 0.2MnO_3 thin film with a preferential (110) orientation was obtained on Si (100) substrates by facing-target sputtering technique. It was found that the La_ 0.8Sr_ 0.2MnO_3 (110) film was shown when SrMnO3 (40 nm) buffer layers grown at 500 ℃. The (110) preferential orientation of La_ 0.8Sr_ 0.2MnO_3 can be realized when the SrMnO_3 (12 nm) buffer layer is grown at 750 ℃.