摘要
用射频磁控溅射法在Si(100)和玻璃衬底上制备出衬底温度分别为300,450,600℃的碳化硅薄膜,并对薄膜进行了拉曼光谱和原子力显微镜测试分析。结果表明,用溅射法在玻璃衬底上生长出微晶SiC(μc-SiC)薄膜和在Si(100)衬底上生长出立方碳化硅(β-SiC)薄膜。并且薄膜材料的结晶度随着衬底温度的升高而改善。
The SiC thin films were grown on Si(100) and glass of temperature 300,450,600℃ by magnetron sputtering. The SiC thin Films were analysised by Raman spectra and AFM. The results show that the β-SiC films are grown on Si(100) of 600℃ and the μc-SiC films are grown on glass by magnetron sputtering. The crystalline of the films is improved by increasing the temperature of the substrate.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第8期20-22,共3页
Electronic Components And Materials
基金
云南自然科学基金资助项目(青年基金:k1010265)
