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新型CMP用二氧化硅研磨料 被引量:3

Novel SiO_2 Slurry in CMP
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摘要 介绍化学机械抛光技术的重要性,找出影响其性能的关键因素即为研磨料。然后对常用的研磨料种类做概要论述,找出其优缺点。并在前人研究的基础上研制出更具优势的抛光研磨料,详细介绍其特点及使用条件,另对它的使用效果进行了简要说明。 The importance of chemical mechanical polishing( CMP)was introduced. The key factor influencing its property was found,that is, slurry. The class of slurry was summarized. The preponderant slurry was prepared on the base of other researchers. The peculiarity and using condi- tion were recommended. On the other hand, the effect of the slurry was showed briefly.
出处 《半导体技术》 CAS CSCD 北大核心 2005年第8期25-26,33,共3页 Semiconductor Technology
关键词 化学机械抛光 二氧化硅 抛光液 CMP SiO2 slurry
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参考文献3

  • 1WALSH R J, HERZOG A H. Process for polishing semiconductor materials[P].U.S. patent:US3170273,1965-02-23.
  • 2CHEN W C, LIN S C, DAI B T, et al. Chemical mechanical polishing of low-dielectric-constant polymers: Hydrogen silsesquioxane and methyl silesquioxane[J]. J Electrochem Soc, 1999, 146(8):3004 - 3008.
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同被引文献25

  • 1檀柏梅,牛新环,韩丽丽,刘玉岭,崔春翔.铌酸锂CMP速率的影响因素分析[J].Journal of Semiconductors,2007,28(z1):574-578. 被引量:4
  • 2张楷亮,宋志棠,张建新,檀柏梅,刘玉岭.ULSI介质CMP用大粒径硅溶胶纳米研磨料的合成及应用研究[J].电子器件,2004,27(4):556-558. 被引量:8
  • 3LIU R H, JIN Z J, GUO D M, et al. Experimental study on influences of dispersant on dispersion and stability of CMP slurry with silica [ C ]//ICSFT. Dalian, China, 2006 : 341-346.
  • 4CHEN K W,WANG Y L,LIU C P,et al. Novel slurry solution for dishing elimination in copper process beyond 0.1 μm technology [ J]. Thin Solid Films, 2006,498 (1/2) :50-55.
  • 5CHEN K W, WANG Y L, LIU C P, et al. Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect [J]. Thin Solid Films, 2004, 447-448 : 531-536.
  • 6CHEN P H, HUANG B W, SHIN H C. A chemical kinetics model for a mixed-abrasive Chemical mechanical polishing [J]. Thin Solid Films,2005,483(1/2) :239-244.
  • 7DI W G, LIU Y L, TAN B M, et al. The research of silicon wafer' s polishing fog [ C ]//Proc of ICSICT. Shanghai, China, 2001 : 294-296.
  • 8CHIU S Y, WANG Y L, LIU C P, et al. High-selectivity damascene chemical mechanical polishing [J]. Thin Solid Films, 2006,498 ( 1/2) : 60-63.
  • 9LEE H,JOO S,JEONG H.Mechanical effect of colloidal sili-ca in copper chemical mechanical planarization[].Journal ofMaterials Processing Technology.2009
  • 10Hong Lei,Jianbin Luo.CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation[].Wear.2004

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