湿法腐蚀DFB半导体激光器的均匀光栅的研究

The Wet Etching Study of the Uniform Grating DFB Semiconductor Laser

论述了用湿法腐蚀电子束光刻的均匀光栅DFB激光器亚微米光栅的过程,研究了几种腐蚀液对半导体激光器外延材料中InP的腐蚀过程。用扫描电子显微镜(SEM)对其腐蚀情况进行了分析,通过调节腐蚀液HBr:HNO3:H2O的体积比,找到了对InP腐蚀的最佳配比(1:1:30)以及合适的腐蚀条件(室温23℃)。利用这种腐蚀液得到的光栅图形可以满足DFB激光器的要求。

The etching processes of sub-micro grating for the uniform grating DFB lasers by wet etching electron lithographic using several wet etching solutions are studied. The etching instance is analyzed using SEM. By modifying the volume ratios of the HBr/HNO3/H2O, the good etching condition which is the optimum volume ratio (1:1:30) for etching InP at room temperature(23℃) was found. Using this etching solution, the etching grating images can satisfy the requirement of the DFB semiconductor lasers .