CF_4/CHF_3反应刻蚀石英和BK7玻璃

Reactive ion etching on quartz and BK7 glass with CF_4/CHF_3

用CF4/CHF3作为工作气体对石英和BK 7玻璃进行了研究,分析了气体组分、气体流量和射频偏压等几种因素对刻蚀速率的影响,结果表明刻蚀速率与射频偏压的均方根成正比。在1 CF4∶1CHF3的等离子体中由于与光刻胶良好的刻蚀选择比,在石英基片上获得了侧壁陡直的槽形。用光学表面轮廓仪观测的结果表明偏压的增加和过高的气体流量易使基片表面质量下降。

The etching rate and mechanism for quartz and BK7 glass in CF_4/CHF_3 as working gas were investigated as a function of gas composition, gas flowrate and RF bias voltage, and the results showed that the etching rate is in direct proprtion to the mean square root of RF bias voltage. High fidelity pattern transfer was well achieved on quartz substrate that was etched with 1 CF_4∶1CHF_3 plasma as a result of good selectivity of photoresisit. The surface morphology were examined by optical surface contourgraph and shown that the increase in bias voltage and too high gas flowrate are liable to degrade the surface morphology of substrate.