低介电常数材料和氟化非晶碳薄膜的研究进展

Research Progress of Low-K Material and Fluorinated Amorphous Carbon Film

目前微电子器件正经历着一场材料结构的变革。由于其特征尺寸进入到100nm,由内部金属连线的电阻和线间绝缘介质层的电容构成的阻容延时已经成为限制器件性能的主要因素。用电阻更小的铜取代目前使用的铝作金属连线,用低介电常数(低 K)材料取代二氧化硅作线间介质成为重要的、应用价值巨大的研究课题。着重叙述了具有低介电常数的氟化非晶碳薄膜的研究进展。

Now the micro-electronic device is undergoing the innovation of material structure.Because its feature size has come into 100nm,resistance of inner metal interconnect lines and the time-delay made by the capacitance of the insu- lator between the interconnect lines are the main factors to limit the performance of the device.Using Cu whose resistance is lower to replace the metal interconnect lines made by Al and using low-K materials to replace SiO_2 as the medium between the interconnect lines have become an important subject with great practical value.In this paper,the recent research progress of low-K fluorinated amorphous carbon film is introduced.